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PRODUCTSSiC circuit blockHGCB-2A-401350

Circuit block for characteristic evaluation of SiC power device

This product is a half-bridge circuit (one phase of inverter) equipped with Rohm’s trench type SiC-MOSFET. It can be used to evaluate SiC power devices and for load tests because the output is about 7 kW with one unit.

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Overview

● This product is a circuit block that uses Rohm’s trench type SiC-MOSFETs SCT3030AL.

● This product is equipped with two SiC power devices and a gate drive circuit and consists of a substrate, heat sink, and fan.

● This product can receive external gate signals that drive each SiC power device and can also use external power.

● An external electrolytic capacitor, 24 V and 5 V power supplies, wires between the substrates, and a controller are provided by the customers.

● The control part and the main circuit part are insulated.

● This product has protective functions for arm short-circuits and undervoltage in the gate drive circuit and therefore does not easily break, even when the gate pulse pattern is incorrect.

Circuit Block for Power Electronics

Features

● Equipped with SiC-MOSFET, insulated gate drive circuit, and gate power supply circuit
The test environment for the SiC device can be easily constructed. For example, it is possible to operate and test the SiC device with a weak electric circuit, and it is possible to omit the insulation design, which significantly relates to a malfunction.
● Simple and open structure
Checking of the characteristics of the SiC and operation of the peripheral circuits is easy. Specifically, test pins are arranged in each part for easy measurement, so that checking circuit operation is easy because there are only a few equipment components.
● Disclose design materials, such as the circuit diagram
Both theoretical and actual operation can be considered, and it can be used as a design reference. Also, the user can make modifications according to the applications.
* Customization and application prototypes are also possible upon request.

Application

For R & D purpose

  • ● For evaluation of SiC power device
  • ● For evaluation of magnetic material
  • ● For evaluation of a variety of different measuring instruments

For product prototyping

  • ● As a main circuit to be incorporated in prototype products at the time of trial production.

As embedded item for mass-production

  • ● As a main circuit to be incorporated into mass-production products.

Specification (model: HGCB-2A-401350)

Specification

Connection example

Connection example

Main interface

Main interface

Q&A

Can I have the SiC devices replaced with ones made by another manufacturer when placing an order?
Yes, but a separate charge will apply. Please feel free to consult us in such a case.
Can I buy a three-phase inverter with the products preassembled?
Yes. Three-phase inverters equipped with SiC devices are also available. Please check here.
Is it possible to tune the characteristics, such as the gate drive circuit?
It is possible through customization. Since the circuit diagram is attached at the time of the purchase, you can also modify it yourself.
Is there a product that generates a gate signal for input?
Controllers are available. Peripheral devices like a sensor board are also available. Please see here for details.
Do you offer academic pricing?
Academic pricing is available for this product. Please feel free to contact us.

Rohm Co., Ltd., is introducing our products on its website. Please check here for details.